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| SMD Type NPN Silicon Bias Resistor Transistor KMUN2231T1 Transistors Features Simplifies Circuit Design Reduces Board Space +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Reduces Component Count +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 PIN 1 BASE (INPUT) R1 R2 +0.1 0.97-0.1 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) 1.Base +0.1 0.38-0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-Emitter Voltage Collector Current -Continuous Collector Power dissipation Thermal Resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCEO IC PC RJA Tj Tstg Rating 50 50 0.1 0.23 540 150 -55 to +150 Unit V V A W /W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Output Voltage (on) Output Voltage (off) Input Resistor Resistor Ratio Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VOL VOH R1 R1/R2 Testconditons Ic= 10 AIE=0 Ic= 2mA IB=0 VCB= 50 V , IE=0 VCE= 50 V , IB=0 VEB= 6V , IC=0 VCE=10V, IC= 5.0mA IC = 10 mA, IB = 5 mA VCC = 5.0 V, VB = 2.5 V, RL = 1.0k VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 4.9 1.5 0.8 2.2 1.0 2.9 1.2 V k 8 15 0.25 V Min 50 50 0.1 0.5 2.3 Typ Max Unit V V A A mA 0-0.1 www.kexin.com.cn 1 |
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